Novel Etch Technologies Utilizing Atomic Layer Process For Advanced Patterning

A new approach combining atomic layer deposition and organic film etch process may solve critical challenges in the various processes in advanced nodes.


We demonstrated a high selective and anisotropic plasma etch of Si3N4 and SiC. The demonstrated process consists of a sequence of ion modification and chemical dry removal steps. The Si3N4 etch with H ion modification showed a high selectivity to SiO2 and SiC films. In addition, we have developed selective etch of SiC with N ion modification. On the other hand, in the patterning etch processes, the fabrication of multi-layer films requires the precision of atomic scale XY CD controllability in complex…

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